• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
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  • 优先权
    • 专利摘要:
    A method of making an N / MEMS device having a structure having an active portion having a first suspended member and a second suspended member of different thicknesses, the method comprising the following steps: - forming in a first substrate (100) a sacrificial zone (105), - Postpone a given layer on the sacrificial zone, - Define in said given layer a first element suspended opposite the first sacrificial zone, - Define a second element suspended in the first substrate and said given layer, - Release at least the first suspended element.
    公开号:FR3021965A1
    申请号:FR1455107
    申请日:2014-06-05
    公开日:2015-12-11
    发明作者:Audrey Berthelot
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD AND PRIOR ART The present invention relates to a method for producing a structure provided with at least one active part having zones of the same type. FIGS. different thicknesses. This structure can be implemented in the context of the manufacture of microelectromechanical systems (MEMS for "microelectromechanical systems" according to English terminology, MEMS including MOEMS for "Micro-Opto-Electro-Mechanical Systems") and / or nano-electromechanical systems (NEMS for "nanoelectromechanical systems" according to the English terminology, the NEMS including NOEMS for "Nano-Opto-Electro-Mechanical Systems") to achieve for example sensors and / or actuators.
    [0002] The MEMS and NEMS devices can be provided with a fixed part and at least one part suspended relative to the fixed part, the suspended part being generally called "active part" and able to move and / or deform under the effect of an external action, for example a mechanical, and / or electrical, and / or magnetic action. This displacement may allow for example to perform a detection of an acceleration, a rotation. Currently, there are some sensors formed of an active part comprising suspended elements of different thicknesses: a first element, in particular of the NEMS type produced in a layer of thickness for example of the order of several hundred nanometers can be intended for example to form a strain gauge, while a second suspended element, in particular MEMS, typically of a thickness of several tens of micrometers, may be intended for example to form a mass of inertia. The document "M & NEMS: a new approach for ultra low colt 3D inertial sensor" by P. Robert et al., IEEE Sensors 2009 conf., 25-28- Oct 2009 proposes a method for producing MEMS & NEMS structures with an active part equipped with of elements of different thicknesses and which is partially formed in the surface layer of an SOI substrate. EP 2 599 746 A1 proposes an alternative method for producing MEMS & NEMS structures from a bulk substrate, also commonly called "bulk". In the methods described in these documents, the first suspended element and the second suspended element are at least partially formed in a layer made by epitaxial growth.
    [0003] Gold epitaxy can be a long and expensive step that requires the use of specific equipment. Moreover, the thickness of the layers that can be obtained by epitaxy is generally limited. EP 2 599 745 A1 proposes an embodiment for producing MEMS & NEMS structures without using an epitaxy.
    [0004] In this embodiment, the definition of the suspended element of smaller thickness comprises the realization of trenches then an etching under a zone of the superficial layer of the massive substrate located between the trenches to join these trenches and to release this zone forming the suspended element. A disadvantage of this method is the lack of precise control of the geometry of the suspended element. There is the problem of finding a method for producing a structure with an active part comprising suspended elements of different thicknesses and which does not have the above disadvantages, and in particular which does not require a step of epitaxy to achieve the suspended elements and allow a precise definition of the suspended elements. DISCLOSURE OF THE INVENTION Thus, the invention relates to a method for producing a structure comprising an active part comprising at least a first suspended element and a second suspended element of different thicknesses, the method comprising steps of: a first substrate of a first sacrificial zone, carrying, on a first face of the first substrate, a given layer extending over the first sacrificial zone, - defining in said given layer at least a first suspended element opposite of the first sacrificial zone, the definition of the first element comprising the formation of one or more first trenches having a bottom revealing the first sacrificial zone. defining at least a second suspended element by forming one or more second trenches in the first substrate and through said given layer, the second suspended element thus having a thickness e2 greater than the thickness e1 of the first suspended element, release of the first suspended element, this release comprising the removal of the first sacrificial zone.
    [0005] Thus, by transferring the given layer on the first substrate, it is possible to avoid an epitaxy to form the first suspended element and the second suspended element. The first sacrificial zone can serve as an etch stop zone when defining the first element in the given layer. This can be used to precisely define the first element. The first sacrificial zone is removed here only after having defined the first element and the second suspended element. This first sacrificial zone may also serve as a protection zone of the first suspended element when defining the second suspended element, in particular when this definition is achieved by etching through a second face of the first substrate opposite to the first face. The formation of the sacrificial zone may comprise the production of at least one hole through a first face of the first substrate and then filling the hole with a first material.
    [0006] The method may further comprise, after forming the first sacrificial zone, a step of transferring a second substrate to the first substrate. This transfer is carried out either on the second face of the first substrate or on the given layer.
    [0007] According to a first possibility of implementing the method, in this order, the definition of the second suspended element is carried out in this order: the transfer of the layer given on the first substrate, then the definition of the first element suspended in said given layer, then the transfer of the second substrate to the first substrate.
    [0008] In this case, after the definition of the first element suspended in said given layer and the transfer of the second substrate to the first substrate, the first trenches are filled with a material called "sacrificial material", the first trenches filled with sacrificial material forming another sacrificial zone disposed around the first element.
    [0009] The release of the first element in this case also includes the removal of this other sacrificial zone. Advantageously, the sacrificial material may be the same as that of the first sacrificial zone. This facilitates the final release of the first suspended element.
    [0010] According to a second possibility of carrying out the method, the step of transferring the second substrate to the first substrate is carried out in this order, followed by the step of transferring said given layer onto the first substrate, and then the step consisting in defining the first suspended element in said given layer.
    [0011] The second substrate may be assembled to the first substrate by means of a bonding layer comprising at least one portion called the second sacrificial zone arranged opposite the first suspended element and a region of the first substrate in which the second suspended element is made. or intended to be realized.
    [0012] In this case, the release of the first suspended element may comprise a withdrawal of the second sacrificial zone. This withdrawal can also make it possible to release the second suspended element. The first sacrificial zone and the second sacrificial zone may be based on the same material. This makes easier the final release of the first suspended element and the second suspended element. In this case, and in this case where the first trenches are filled with a material called "sacrificial material", the sacrificial material may be the same as that of the first sacrificial zone and the second sacrificial zone.
    [0013] The bonding layer may advantageously also serve as an etching stop zone during the formation of the second trenches around the second suspended element. According to one possible embodiment, a cavity may be formed on one face of the second substrate, the transfer of the second substrate on the first substrate being carried out in such a way that this cavity is disposed opposite a region of the first substrate in which the first element and the second element are intended to be formed. A cavity in the second substrate may in particular make it possible to increase the space in which the first suspended element and the second suspended element can move. According to one possibility of implementing the method for which the hole made is a blind hole, after transfer of the second substrate to the first substrate and prior to the formation of the second suspended element, a thinning of the first substrate, so as to remove a thickness located on the side of a second face of the first substrate opposite to said first face may be performed. This thinning can be continued until reaching the first sacrificial zone. In this case, the first sacrificial zone can serve as an etch stop zone. Thinning of the first substrate makes it possible to adjust the thickness of the second suspended element formed in the thickness of the first substrate.
    [0014] According to one possible implementation of the method, the given layer may be based on a semiconductor material, advantageously monocrystalline Si. According to one possible implementation of the method, the transfer of said given layer may comprise steps of: - transfer of another substrate comprising this given layer or covered by this given layer, then - removal of a thickness of this other substrate so as to preserve the given layer.
    [0015] The removal of this thickness of this other substrate can be achieved using a smartcutTM method The first suspended element can be provided with a given width while the hole can have a section measured in the same direction as the width. given that is greater than the given width in order to completely free the first element. According to one possible implementation, the first substrate is a massive substrate, also called a "bulk" substrate. In this case, it is advantageously possible to guard against the use of a more expensive semiconductor-on-insulator substrate. Advantageously, the first substrate is monocrystalline silicon. Similarly, the second substrate can also be a solid or bulk substrate. Advantageously, the second substrate is monocrystalline silicon. The present invention also relates to a method for manufacturing a MEMS and / or NEMS device comprising the production of a structure according to a method as defined above. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given, purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIGS. 1A to 1K are schematic representations various steps of a method of producing an active part structure with suspended elements of different thicknesses according to a first embodiment; FIGS. 2A to 2C are diagrammatic representations of different steps for producing a variant of the method of the first embodiment; FIGS. 3A to 3H are diagrammatic representations of different steps of making a second embodiment; FIGS. 4A to 4C are diagrammatic representations of different steps for producing another variant of the method according to the second embodiment; Identical, similar or equivalent parts of the different figures bear the same numerical references so as to facilitate the passage from one figure to another.
    [0016] The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable. In addition, in the following description, terms which depend on the orientation of the structure such as "lateral", "upper", "lower", "under", "on", apply considering that the structure is oriented as illustrated in the figures. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS In the present application, the term "active part" of a MEMS and / or NEMS structure means a suspended part, capable of moving and / or deforming under the effect of an action. external which can be for example mechanical, and / or electrical, and / or magnetic. An element that will be named "first suspended element" can form an NEMS part of a MEMS & NEMS structure, while another element that will be designated as a "second suspended element" can form a MEMS part of the MEMS & NEMS structure.
    [0017] In the methods described, only a first suspended element and a second suspended element are formed for the sake of simplicity. However, the methods according to the invention make it possible to produce one or more first suspended elements and one or more second suspended elements.
    [0018] A first example of a method for producing a structure comprising an active part provided with zones of different thicknesses will now be given in conjunction with FIGS. 1A to 1K. A starting material of this process may be a first substrate 100, in particular a bulk substrate ("bulk" according to the English terminology) which may be formed of a semiconductor material such as Si, or for example to base of Ge or SiGe or GaN or SiC, and in which at least one hole 101 is made (FIG. 1A). The hole 101 may be made for example by dry anisotropic etching of the DRIE ("Deep Reactive Ion Etching") type through a first face of the first substrate 100. The hole 101 may be formed with a depth also called height H (measured in parallel at an axis z of an orthogonal coordinate system [0; x; y; z] in FIG. 1A) for example between several micrometers and several tens of micrometers, and a critical dimension also called width A (measured parallel to the plane [0] x; y] orthogonal reference [0; x; y; z]) for example between several tens of nanometers and several micrometers.
    [0019] Then, the hole 101 is filled with a material 102 for forming an etch stop material and a sacrificial material during the process (FIG. 1B). The filler material 102 is preferably a material selected to be selectively etchable from the material of the first substrate 100. The material 102 may be, for example, a dielectric material such as SiO 2. In this case, the material filling 102 may be made for example by oxidation of the walls and the bottom of the hole 101 or by an oxide deposit which may be in conformity. The filling may be performed so that the material 102 protrudes from the mouth of the hole 101 and covers an "upper" face of the first substrate 100. In this case, a withdrawal of the material 102 in an area on the upper face and beyond the mouth of the hole 101 is achieved, for example by means of a planarization type CMP (for "chemical mechanical planarization") with a stop on the upper face of the first substrate 100 (Figure 1C). The hole 101 filled with material 102 constitutes a zone 105 intended to form an etching stop zone and a sacrificial zone intended to be removed later.
    [0020] Then, it is possible to prepare the upper face of the first substrate 100 for bonding or a transfer to a layer 301 in which the first suspended element and a part of the second suspended element are intended to be made. This preparation can be carried out for example using a plasma treatment. The layer 301 carried can be semiconducting and in particular a surface layer of another substrate 300 intended to be detached from this other substrate 300. The thickness of the layer 301 may be between several nanometers and several tens of nanometers, for example of the order of 100 nm, but the report possibly allows to assemble layers of greater thickness. Thus, the layer 301 of this other substrate 300 is firstly assembled on the upper face of the first substrate 100, for example by molecular bonding (FIG. 1D). Such a method does not necessarily require alignment. Then, at least one thickness of the other substrate 300 is removed. This removal can be carried out by a "splitting" method in which, after having created a longitudinal embrittlement zone 306 in the substrate 300 which separates a portion called "handle" and the surface layer 301, the handle is detached so as to retain only the surface layer 301. The weakening zone 306 can be created for example by means of an implantation of H2 possibly carried out before assembly with the first substrate 100. The detachment step (FIG. 1E) may be preceded by an annealing step.
    [0021] The first suspended element 310 is then defined in the surface layer 301. For this, it is possible to carry out a lithography step of the layer 301 to delimit an area, for example in the form of a beam of width d (measured parallel to the plane [0] x; y] of an orthogonal reference [0; x; y; z] in FIG. 1F), for example between 100 nm and 1 μm wide, of thickness e1 (measured parallel to an axis z of the orthogonal coordinate system); [0; x; y; z]) for example between 100 nm and 1 μm and a length of between 100 nm and 100 μm, which may be intended to produce a strain gauge. The first suspended element 310 may be provided with a width d less than the section A of the hole 101 filled with material 102. This configuration is advantageous because the layer 102 serves as a protective layer of the first element and etch stop layer when the definition of the second suspended element. The etching of the layer 301 is carried out so as to form trenches 311 around the first suspended element 310 and to stop on the first sacrificial zone 105. These trenches 311 may then be filled with a material 312 called "second material And which may be advantageously the same as the filling 102 of the hole 101 formed in the first substrate 100 (Figure 1G). The trench filling material 312 is preferably a material selected to be selectively etchable with respect to the material of the first substrate 100 and the layer 301. The trench filling material 311, by As an example of the SiO 2, another sacrificial zone 315 forms around the first suspended element 310 which is in contact with the sacrificial zone 105 and which is also intended to be withdrawn later. Next, the first substrate 100 is assembled with a substrate 200 called a second substrate. The second substrate 200 may in particular be a solid substrate of semiconductor material such as Si, or for example based on Ge or SiGe or GaN or SiC, or based on another material such as, for example glass. The second substrate 200 is, according to a particular embodiment, covered with a layer 201 called "bonding" for bonding or promoting adhesion to the first substrate 100 (Figure 1H). A transfer for example by molecular bonding or anodic bonding or eutectic bonding can be performed.
    [0022] Then, it is possible to thin the first substrate 100 so as to achieve a shrinkage of its thickness at its lower face, that is to say the face opposite to the upper face of the first substrate 100 against which the link 201 of the second substrate 200 is disposed. This thinning can be implemented so as to reveal the sacrificial zone 105 made in the thickness of the first substrate 100, the sacrificial zone 105 then being able to mark the stop of the etching (FIG. 11). The thinning is for example made by abrasion on the back side ("backgrinding" according to the English terminology), then mechanical-chemical polishing. This thinning makes it possible to define the thickness of the second suspended element corresponding for example to the MEMS part in the case of structures called MEMS & NEMS. The second suspended element 110 is then defined in the first substrate and in the surface layer 301. For this purpose, it is possible to carry out a lithography step to delimit an area, for example, in the form of several beams of width comprised for example between 0.1 μm and 100 μm. um, of thickness e2 (measured parallel to an axis z of an orthogonal coordinate system [0; x; y; z] in FIG. 1J) for example between 10 μm and 100 μm and a length of between 10 μm and 100 μm. The etching of the first substrate 100 and the layer 301 is performed, so that trenches 111 called second trenches are formed around the second suspended element, for example by a deep ion etching technique or DRIE (for "Deep Reactive Ion Etching"). "). The bottom reveals the bonding layer 201 which can here serve as an etch stop layer. The first suspended element 310 is then released by removing the sacrificial zones 105 and 315 located around it. Another sacrificial zone 205 corresponding to a portion of the surface layer 201 which extends opposite the first element 310 and the second suspended element 110 is also removed. The removal of this other sacrificial zone 205 allows the release of the second suspended element 110. The withdrawal of the sacrificial zones has the effect of discovering the trenches 111, 311, and the hole 101 (Figure 1K). In a case where the sacrificial zones 105, 315, 205 are formed of the same material, removal is facilitated. The material of the sacrificial zones is preferably also designed so that it can be etched selectively with respect to the material or materials of the substrates 100, 200 and of the layer 301. In the case, for example, where the sacrificial zones 105, 315, 205 are based on SiO2, the release can be carried out by etching with hydrofluoric acid.
    [0023] At the end of this release, portions of the bonding layer 201 may be retained so as to form pillars 201a, 201b ensuring the maintenance of the assembly between the first substrate 100 and the second substrate 200. These pillars 201a, 201b are distributed around the first element 310 and second element 110 suspended. A variant of the first example of a method is given in FIGS. 2A-2C. For this variant, the second substrate 200 comprises a cavity 220 made on its upper face (FIG. 2A) and which, when the second substrate 200 is then transferred to the first substrate 100, is placed opposite the first suspended element 310 and an area in which the second suspended element 110 is intended to be realized (Figure 2B). The second suspended element 110 is then structured in the first substrate 100 and the surface layer 301. Then, the first suspended element 310 is released by removing the sacrificial zones 105 and 315 located around it (FIG. 2C). With such a cavity 220, an etching of a sacrificial zone located under the suspended elements and made in a bonding layer is not necessary, a step of releasing the second suspended element is then not necessary either. Another exemplary embodiment is given in FIGS. 3A-3H.
    [0024] For this other embodiment, after forming the hole 101 in the first substrate 100, the hole 101 is filled with the material 102, for example SiO 2, so that the material 102 projects from the mouth of the hole 101 and a layer 103 of material 102 covers the upper face of the first substrate 100. Next, the first substrate 100 is assembled with the second substrate 200 (FIGS. 3A and 3B), by putting the layer 103 of material 102 flush with the first substrate 100 in contact with the connecting layer 201 of the second substrate 200. 100. An oxide-oxide bonding may for example be performed when the material 102 and the bonding layer 201 are based on SiO 2. Then, thinning of the first substrate 100 is performed so as to remove a thickness located at its lower face, in order to adjust the thickness e2 of the second suspended structure which is intended to be performed later (Figure 3C). The thinning is carried out for example by CMP until reaching the sacrificial zone 105 which then serves as an etching stop zone. A layer 301 is then postponed in which the first suspended element and a part of the second suspended element are intended to be formed (FIG. 3D). This layer 301 is for example the surface layer of another semiconductor substrate 300 and is carried on the lower face of the first substrate 100, for example by molecular bonding. A precise alignment of the substrates is then not necessary.
    [0025] Then, the other substrate 300 is thinned, for example by a detachment process as described above, after creating a longitudinal zone 306 of embrittlement in the other substrate 300 and annealing (FIG. 3E). The first suspended element 310 is then defined in the surface layer 301 (FIG. 3F) surrounded by first trenches 311 whose bottom reveals the sacrificial zone 105. The second suspended element 110 is also defined partly in the surface layer 301 and partly in the the first substrate 101 (FIG. 3G), so that the second suspended element 110 is surrounded by second trenches 111. The bottom of the second trenches 111 reveals the layer 103 of material 102 situated between the two substrates 100 and 200.
    [0026] The first suspended element 310 and the second suspended element 110 are then released by removing the filling material 102 from the hole 101 and by removing a portion of the material 102 and the bonding layer 201 placed between the first substrate 100 and the second substrate 200 and on which the second structure 110 rests (Figure 3H).
    [0027] A variant of the exemplary method which has just been described is given in FIGS. 4A-4C. For this variant, after having formed the hole 101 in the first substrate 100 and which has been filled with material 102, the second substrate 200 is then transferred to the first substrate 100, which this time comprises a cavity 220 made on its upper face (Figure 4A). The cavity 220 is disposed in particular facing an area of the first substrate 100 in which the second suspended element 110 is intended to be made, and facing the sacrificial zone 105 formed by the hole filled with material 102. then the second suspended element 110 in the first substrate 110 and the surface layer 301. Then, the first suspended element 310 is released by removing the sacrificial zone 105 and possibly other sacrificial zones around it (FIG. 4C). With the method according to the invention, it is possible not to resort to the use of semiconductor substrate on insulator, in particular SOI type (for "silicon on insulator") and not to perform epitaxy. A gain in cost and time is then obtained. It is also possible to perform a CMOS co-integration in three dimensions. In this case, the second substrate may be for example a substrate provided with electronic components, for example made in CMOS technology. The method according to the invention is particularly suitable for producing microelectromechanical sensors and actuators and / or nanoelectromechanical systems, for example such as inertial sensors of accelerometers, gyroscopes, magnetometers, pressure sensors, microphones.
    权利要求:
    Claims (16)
    [0001]
    REVENDICATIONS1. A method of producing a structure comprising an active part comprising at least a first suspended element (310) and a second suspended element (110) of different thicknesses, the method comprising the steps of: - forming in a first substrate (100) ) a first sacrificial zone (105), - depositing on a first face of the first substrate a given layer (301) extending at least over the first sacrificial zone, - defining in said given layer (301) at least a first suspended element (310) on the first sacrificial zone (105), by forming one or more first trenches (311) in the given layer having a bottom revealing the first sacrificial zone (105), - Define at least one second suspended element (110) ) by forming one or more second trenches (111) in the first substrate and through said given layer (301), the second suspended member having a greater thickness (e2) e to the thickness (el) of the first suspended element, - Release at least the first suspended element (110) by removing at least the first sacrificial zone (105).
    [0002]
    The method of claim 1, further comprising after forming the first sacrificial zone (105), a step of extending a second substrate (200) on a second face of the first substrate (100), or on the second given layer (301).
    [0003]
    3. Method according to claim 2, wherein in this order, prior to the definition of the second suspended element, the following is carried out: the step of transferring the given layer (301) onto the first substrate (100), then the defining the first suspended element (310) in said given layer (301), and then the step of transferring the second substrate (200) to the given layer (301). 5
    [0004]
    The method of claim 3, wherein between the step of defining the first suspended member (310) in said given layer (301) and the step of extending a second substrate (200) onto the given layer, performs filling of the first trenches (311) with a sacrificial material (312), the first trenches filled with the sacrificial material (312) forming another sacrificial zone (315), the step of releasing the first element (310) comprising the removing said other sacrificial zone.
    [0005]
    5. Method according to claim 2, wherein prior to the definition of the second suspended element is carried out in this order: - the step of the second substrate (200) to the first substrate (100), - then the the step of placing said given layer (301) on the first substrate (100), and then the step of defining the first suspended element (310) in said given layer (301).
    [0006]
    The method according to one of claims 2 to 5, wherein the second substrate (200) is assembled to the first substrate (100) or to the given layer (301) through a tie layer (201). having at least one portion disposed opposite the first suspended element and forming a second sacrificial zone (205) opposite which the second suspended element (110) is to be formed, the subsequent release of the first suspended element (310) comprising the removing said second sacrificial zone (205) to also release the second suspended element.
    [0007]
    7. The method of claim 6, wherein the first and second sacrificial zones (105, 315, 205) are based on the same material.
    [0008]
    The method of claim 6 or 7, wherein the formation of the second trenches (111) is formed by prolonged etching until reaching the bonding layer (201), the bonding layer serving as an etch stop zone.
    [0009]
    9. Method according to one of claims 2 to 8, wherein a cavity (220) is formed on one side of the second substrate, the transfer of the second substrate (200) on the first substrate (100) or the given layer (301 ), being made such that the cavity (220) is disposed opposite a region of the first substrate (100) and / or the given layer in which the first element and the second element are intended to be formed.
    [0010]
    10. Method according to one of claims 2 to 9, wherein the first sacrificial zone is formed by producing at least one blind hole (101) through respectively the first or the second face of the first substrate and filling the hole by at least one first material (102), the method further comprising, after the step of placing the second substrate (200) respectively on the given layer or on the first substrate (100) and prior to the formation of the second suspended element ( 110), a step of respectively thinning the second face or the first face of the first substrate (100) so as to remove a first substrate thickness located on the opposite side to the face from which the hole (101) is made. ) blind, the thinning being continued until reaching the first sacrificial zone (105), the first sacrificial zone (105) then serving as etching stop zone.
    [0011]
    11. Method according to one of claims 1 to 10, wherein the step of transferring said given layer (301) comprises steps of: - transfer of another substrate (300) comprising this given layer (301) or covered by this given layer (301), - partial withdrawal of this other substrate (300) so as to keep the given layer (301) on the first substrate.
    [0012]
    12. The method of claim 11 wherein the transfer is by a direct bonding technique.
    [0013]
    13. Method according to one of claims 1 to 12, wherein the given layer (301) is based on a semiconductor material advantageously monocrystalline silicon.
    [0014]
    14. Method according to one of claims 1 to 13 wherein the first suspended element (310) has a given width, the hole (101) having a section greater than the given width.
    [0015]
    15. Method according to one of claims 1 to 14, wherein the first substrate is a semiconductor substrate preferably monocrystalline silicon.
    [0016]
    16. A method of manufacturing a MEMS and / or NEMS device comprising the production of a structure according to an embodiment method according to one of claims 1 to 15.
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    同族专利:
    公开号 | 公开日
    EP2952472A3|2016-01-13|
    US9802817B2|2017-10-31|
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    US20150353350A1|2015-12-10|
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    EP2952472A2|2015-12-09|
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    FR2977884B1|2011-07-12|2016-01-29|Commissariat Energie Atomique|METHOD FOR PRODUCING A SUSPENDED MEMBRANE STRUCTURE AND ELECTRODE BURNING|
    FR2983188B1|2011-11-30|2016-07-01|Commissariat Energie Atomique|METHOD FOR PRODUCING A STRUCTURE COMPRISING AT LEAST ONE MULTI-THROUGH ACTIVE PART|
    FR2983189B1|2011-11-30|2014-02-07|Commissariat Energie Atomique|METHOD FOR PRODUCING A STRUCTURE COMPRISING AT LEAST ONE ACTIVE PART HAVING DIFFERENT THICKNESS AREAS|
    US9255000B2|2012-12-22|2016-02-09|Robert Bosch Gmbh|CMOS integrated moving-gate transducer with silicon as a functional layer|
    FR3011835B1|2013-10-16|2015-12-25|Commissariat Energie Atomique|METHOD FOR ELECTROCHEMICALLY PRODUCING AT LEAST ONE POROUS AREA OF A MICRO AND / OR NANOELECTRONIC STRUCTURE|
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    US10167189B2|2014-09-30|2019-01-01|Analog Devices, Inc.|Stress isolation platform for MEMS devices|CN105513945A|2014-09-26|2016-04-20|中芯国际集成电路制造有限公司|Semiconductor device, production method thereof, and electronic device|
    FR3048425B1|2016-03-07|2021-02-12|Soitec Silicon On Insulator|STRUCTURE FOR DEVICE WITH INTEGRATED ELECTROMECHANICAL MICROSYSTEMS|
    US9988260B2|2016-04-29|2018-06-05|Nxp Usa, Inc.|Rough MEMS surface|
    FR3063992B1|2017-03-16|2021-07-16|Commissariat Energie Atomique|MICRO-DEVICE INCLUDING AT LEAST ONE MOBILE ELEMENT|
    法律状态:
    2015-06-30| PLFP| Fee payment|Year of fee payment: 2 |
    2015-12-11| PLSC| Search report ready|Effective date: 20151211 |
    2016-07-08| PLFP| Fee payment|Year of fee payment: 3 |
    2017-06-30| PLFP| Fee payment|Year of fee payment: 4 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1455107A|FR3021965B1|2014-06-05|2014-06-05|IMPROVED REALIZATION METHOD OF SUSPENDED ELEMENTS OF DIFFERENT THICKNESSES FOR MEMS AND NEMS STRUCTURE|FR1455107A| FR3021965B1|2014-06-05|2014-06-05|IMPROVED REALIZATION METHOD OF SUSPENDED ELEMENTS OF DIFFERENT THICKNESSES FOR MEMS AND NEMS STRUCTURE|
    US14/707,216| US9802817B2|2014-06-05|2015-05-08|Method for making suspended elements with different thicknesses for a MEMS and NEMS structure|
    EP15170146.3A| EP2952472B1|2014-06-05|2015-06-01|Improved method for the production of suspended elements with different thicknesses for mems and nems structure|
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